
NPN Power Bipolar Junction Transistor (BJT) featuring an 80V collector-emitter breakdown voltage and a 15A continuous collector current. This component offers a 5MHz transition frequency and a minimum DC current gain (hFE) of 20. Packaged in a TO-220-3 configuration, it operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 1.8W. The transistor is RoHS compliant and supplied in a 50-piece tube.
Onsemi 2N6488G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 90V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 3.5V |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 5MHz |
| Gain Bandwidth Product | 5MHz |
| Height | 9.28mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 15A |
| Max Frequency | 5MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.8W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | 2N6488 |
| Transition Frequency | 5MHz |
| DC Rated Voltage | 80V |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N6488G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
