NPN bipolar junction transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 400V and a continuous collector current rating of 500mA. Offers a minimum DC current gain (hFE) of 30 and a transition frequency (fT) of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is lead-free.
Frequency200MHz
PackageTO-92
Current Rating500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi 2N6517CBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6517CBU Datasheet
Download the complete datasheet for Onsemi 2N6517CBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
