NPN Bipolar Junction Transistor (BJT) with a 350V collector-emitter breakdown voltage and 500mA continuous collector current. Features a 200MHz transition frequency and 1V collector-emitter saturation voltage. Packaged in a TO-92 through-hole mount with tin, matte contact plating. Operates from -55°C to 150°C with 625mW power dissipation.
Frequency200MHz
PackageTO-92
Current Rating500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi 2N6517TA technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Matte |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 4.58mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 500mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 350V |
| Weight | 0.24g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6517TA Datasheet
Download the complete datasheet for Onsemi 2N6517TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
