NPN Bipolar Junction Transistor (BJT) with a 350V collector-emitter breakdown voltage and 500mA continuous collector current. Features a 200MHz transition frequency and 1V collector-emitter saturation voltage. Packaged in a TO-92 through-hole mount with tin, matte contact plating. Operates from -55°C to 150°C with 625mW power dissipation.
Frequency200MHz
PackageTO-92
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N6517TA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
350V
Collector Emitter Breakdown Voltage
350V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
350V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin, Matte
Current Rating
500mA
Emitter Base Voltage (VEBO)
6V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
4.58mm
hFE Min
30
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
350V
Max Collector Current
500mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
350V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N6517TA Datasheet
Download the complete datasheet for Onsemi 2N6517TA to view detailed technical specifications.
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