PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current rating of 500mA. Offers a minimum DC current gain (hFE) of 45 and a transition frequency (fT) of 200MHz. Designed for through-hole mounting, this RoHS compliant component operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW.
Frequency200MHz
PackageTO-92-3
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N6519TA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 45 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -300V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6519TA Datasheet
Download the complete datasheet for Onsemi 2N6519TA to view detailed technical specifications.
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