PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector-emitter voltage (VCEO) of 350V and a continuous collector current (IC) of 500mA. Offers a transition frequency (fT) of 200MHz and a minimum DC current gain (hFE) of 30. Operates within a temperature range of -55°C to 150°C with a power dissipation of 625mW. Through-hole mounting and lead-free construction.
Frequency200MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N6520BU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -350V |
| Weight | 0.1782g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N6520BU Datasheet
Download the complete datasheet for Onsemi 2N6520BU to view detailed technical specifications.
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