
High voltage PNP bipolar junction transistor (BJT) in a TO-92-3 package. Features a 350V collector-emitter breakdown voltage and a 350V collector-base voltage. Offers a maximum collector current of 500mA and a transition frequency of 200MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Packaged on a 2000-piece tape and reel.
Onsemi 2N6520RLRAG technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Copper, Tin, Silver |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 5.33mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 500mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -350V |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N6520RLRAG to view detailed technical specifications.
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