High voltage PNP bipolar junction transistor (BJT) in a TO-92 package. Features a collector-emitter breakdown voltage of 350V and a maximum collector current of 500mA. Offers a transition frequency of 200MHz and a minimum DC current gain (hFE) of 30. Operates across a temperature range of -55°C to 150°C with a power dissipation of 625mW. Through-hole mounting with tin, matte contact plating.
Frequency200MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Onsemi 2N6520TA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-350V
Collector Emitter Breakdown Voltage
350V
Collector Emitter Saturation Voltage
-1V
Collector Emitter Voltage (VCEO)
350V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin, Matte
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
4.58mm
hFE Min
30
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
350V
Max Collector Current
500mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-350V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N6520TA Datasheet
Download the complete datasheet for Onsemi 2N6520TA to view detailed technical specifications.
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