N-channel enhancement mode field-effect transistor featuring a 60V drain-to-source breakdown voltage and 200mA continuous drain current. This single-element JFET offers a maximum drain-source on-resistance of 5 Ohms and a typical threshold voltage of 2.1V. Designed for through-hole mounting in a TO-92 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 400mW.
PackageTO-92
Current Rating200mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi 2N7000 technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Nominal Vgs | 2.1V |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 400mW |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.1V |
| Turn-Off Delay Time | 10ns |
| DC Rated Voltage | 60V |
| Weight | 0.201g |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N7000 Datasheet
Download the complete datasheet for Onsemi 2N7000 to view detailed technical specifications.
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