N-Channel Silicon Metal-oxide Semiconductor FET, TO-92 package. Features 60V Drain-Source Voltage (Vdss) and 200mA Continuous Drain Current (ID). Offers a maximum Drain-Source On Resistance (Rds On) of 2 Ohms and a Gate-Source Voltage (Vgs) up to 20V. Operates within a temperature range of -55°C to 150°C with 300mW power dissipation. Through-hole mounting, RoHS compliant, and available on tape and reel.
Onsemi 2N7000_D26Z technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Dual Supply Voltage | 60V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Nominal Vgs | 2.1V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | 2.1V |
| DC Rated Voltage | 60V |
| Weight | 0.201g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N7000_D26Z to view detailed technical specifications.
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