N-Channel MOSFET, through-hole mount, TO-92-3 package. Features 60V drain-source breakdown voltage, 200mA continuous drain current, and 5 Ohm maximum drain-source on-resistance. Operates from -55°C to 150°C with 400mW power dissipation. Includes 3.9V threshold voltage and 10ns turn-on/fall times. RoHS compliant with copper, tin, and silver contact plating.
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi 2N7000TA technical specifications.
General
Package/Case
TO-92-3
Contact Plating
Copper, Tin, Silver
Continuous Drain Current (ID)
200mA
Current Rating
200mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5R
Fall Time
10ns
Gate to Source Voltage (Vgs)
30V
Height
5.33mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
5.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
400mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
N-CHANNEL
Power Dissipation
400mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3.9V
Turn-Off Delay Time
10ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 2N7000TA Datasheet
Download the complete datasheet for Onsemi 2N7000TA to view detailed technical specifications.
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