N-channel MOSFET in a SOT-23-3 package, featuring a 60V drain-to-source breakdown voltage and 320mA continuous drain current. Offers a low drain-source on-resistance of 1.6 Ohms at a nominal gate-source voltage of 2.3V. This single-element transistor boasts a maximum power dissipation of 420mW and operates across a temperature range of -55°C to 150°C. Includes fast switching characteristics with a 9ns fall time and 12.2ns turn-on delay. Contact plating is tin with matte finish, and the component is RoHS and Halogen Free compliant.
Sign in to ask questions about the Onsemi 2N7002KT1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi 2N7002KT1G technical specifications.
| Package/Case | SOT-23-3 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 320mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.6R |
| Drain-source On Resistance-Max | 1.6R |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.01mm |
| Input Capacitance | 24.5pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 420mW |
| Nominal Vgs | 2.3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 1.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.3V |
| Turn-Off Delay Time | 55.8ns |
| Turn-On Delay Time | 12.2ns |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N7002KT1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
