N-channel MOSFET in a SOT-23-3 package, featuring a 60V drain-to-source breakdown voltage and 320mA continuous drain current. Offers a low drain-source on-resistance of 1.6 Ohms at a nominal gate-source voltage of 2.3V. This single-element transistor boasts a maximum power dissipation of 420mW and operates across a temperature range of -55°C to 150°C. Includes fast switching characteristics with a 9ns fall time and 12.2ns turn-on delay. Contact plating is tin with matte finish, and the component is RoHS and Halogen Free compliant.
PackageSOT-23-3
PolarityN-CHANNEL
Power300mW
Quick Jump:
Technical Specifications
Onsemi 2N7002KT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 320mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.6R |
| Drain-source On Resistance-Max | 1.6R |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.01mm |
| Input Capacitance | 24.5pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 420mW |
| Nominal Vgs | 2.3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 1.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.3V |
| Turn-Off Delay Time | 55.8ns |
| Turn-On Delay Time | 12.2ns |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N7002KT1G Datasheet
Download the complete datasheet for Onsemi 2N7002KT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
