N-Channel Enhancement Mode Field Effect Transistor for surface mount applications. Features 60V drain-source breakdown voltage and 115mA continuous drain current. Offers a maximum drain-source on-resistance of 7.5 Ohms. Operates within a temperature range of -55°C to 150°C. Packaged in SOT-523 with tin, matte contact plating, supplied on a 3000-piece tape and reel.
PackageSOT-523
MountingSurface Mount
PolarityN-CHANNEL
Power200mW
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Technical Specifications
Onsemi 2N7002T technical specifications.
General
| Package/Case | SOT-523 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 115mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 7.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 7.5R |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.78mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.76V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Rds On Max | 7.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.76V |
| Turn-Off Delay Time | 12.5ns |
| Turn-On Delay Time | 5.85ns |
| Weight | 0.03g |
| Width | 0.98mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N7002T Datasheet
Download the complete datasheet for Onsemi 2N7002T to view detailed technical specifications.
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