The 2N7002WT3G is a surface mount N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 280mW and a drain to source breakdown voltage of 60V. The device is RoHS compliant and features a 1.6R drain to source resistance.
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Onsemi 2N7002WT3G technical specifications.
| Continuous Drain Current (ID) | 310mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.6R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 24.5pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 280mW |
| Radiation Hardening | No |
| Rds On Max | 1.6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55.8ns |
| Turn-On Delay Time | 12.2ns |
| RoHS | Compliant |
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