NPN Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 100V. Offers a minimum DC current gain (hFE) of 1000 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW.
PackageTO-92
Current Rating1.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi 2N7052 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.5V
Current Rating
1.5A
Emitter Base Voltage (VEBO)
12V
hFE Min
1000
Lead Free
Lead Free
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Dissipation
625mW
Reach SVHC Compliant
No
Series
2N7052
Transition Frequency
200MHz
DC Rated Voltage
100V
Weight
0.201g
Compliance
RoHS
Not Compliant
Datasheet
Onsemi 2N7052 Datasheet
Download the complete datasheet for Onsemi 2N7052 to view detailed technical specifications.
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