NPN Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 100V. Offers a minimum DC current gain (hFE) of 1000 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW.
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Onsemi 2N7052 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| Series | 2N7052 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 100V |
| Weight | 0.201g |
| RoHS | Not Compliant |
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