The 2N7052_D74Z is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a collector-emitter saturation voltage of 1.5V. It has a current rating of 1.5A and a maximum power dissipation of 625mW. The transistor is suitable for use in applications where a high current gain is required, with a minimum current gain (hFE) of 1000. It is available in an ammo pack with 2000 units per package and is lead-free.
PackageTO-92-3
Current Rating1.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi 2N7052_D74Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Series | 2N7052 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N7052_D74Z Datasheet
Download the complete datasheet for Onsemi 2N7052_D74Z to view detailed technical specifications.
No datasheet is available for this part.