The 2SA1381CSTU is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 100mA. It features a gain bandwidth product of 150MHz and a maximum power dissipation of 7W. The transistor is packaged in a TO-126 flange mount and is suitable for through hole mounting. It has an operating temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi 2SA1381CSTU datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi 2SA1381CSTU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 40 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 7W |
| Transition Frequency | 150MHz |
| Weight | 0.761g |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi 2SA1381CSTU to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
