The 2SA1381ESTU is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 300V and a maximum operating temperature of 150°C. It has a high current gain of 40 and a maximum collector current of 100nA. The transistor is packaged in a TO-126 flange mount and is available in a rail/tube packaging format. It is suitable for high-frequency applications with a gain bandwidth product of 150MHz and a transition frequency of 150MHz.
Frequency150MHz
PackageTO-126
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi 2SA1381ESTU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 40 |
| Max Collector Current | 100nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 7W |
| Transition Frequency | 150MHz |
| Weight | 0.761g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2SA1381ESTU Datasheet
Download the complete datasheet for Onsemi 2SA1381ESTU to view detailed technical specifications.
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