The 2SA1381FSTU is a PNP transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 100mA. It features a gain bandwidth product of 150MHz and a maximum power dissipation of 7W. The transistor is packaged in a TO-126 flange mount package and is suitable for operation over a temperature range of -55°C to 150°C.
PackageTO-126
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi 2SA1381FSTU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 40 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7W |
| Mount | Through Hole |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Transition Frequency | 150MHz |
| Weight | 0.761g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2SA1381FSTU Datasheet
Download the complete datasheet for Onsemi 2SA1381FSTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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