PNP Bipolar Junction Transistor (BJT) in a SOT-416 package. Features a collector-emitter voltage (VCEO) of 50V, collector current of 100mA, and a transition frequency of 140MHz. Offers a minimum DC current gain (hFE) of 120 and a maximum power dissipation of 150mW. Operates across a temperature range of -55°C to 150°C. This component is RoHS compliant and Halogen Free, supplied in tape and reel packaging with 3000 units per reel.
Frequency140MHz
PackageSOT-416
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi 2SA1774T1G technical specifications.
General
| Package/Case | SOT-416 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 140MHz |
| Gain Bandwidth Product | 140MHz |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Frequency | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | 2SA1774 |
| Transition Frequency | 140MHz |
| DC Rated Voltage | -50V |
| Width | 0.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SA1774T1G Datasheet
Download the complete datasheet for Onsemi 2SA1774T1G to view detailed technical specifications.
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