PNP Epitaxial Silicon Transistor, designed for through-hole mounting. Features a maximum collector current of 17A and a maximum power dissipation of 130W. Offers a collector-emitter voltage (VCEO) of 250V and a transition frequency of 30MHz. Operates within a temperature range of -55°C to 150°C, with tin-matte contact plating. This RoHS compliant component is supplied in a rail/tube package.
Frequency30MHz
MountingThrough Hole
PolarityPNP
Power130W
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Technical Specifications
Onsemi 2SA1962RTU technical specifications.
General
| Collector Base Voltage (VCBO) | -250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 55 |
| Max Collector Current | 17A |
| Max Frequency | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SA1962RTU Datasheet
Download the complete datasheet for Onsemi 2SA1962RTU to view detailed technical specifications.
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