The 2SA2169-E is a PNP bipolar junction transistor with a maximum collector current of 10A and a maximum operating temperature of 150°C. It features a gain bandwidth product of 130MHz and is packaged in a TO-251-3 case. The transistor is RoHS compliant and lead free, with a maximum power dissipation of 950mW. It has a minimum operating temperature of -55°C and is suitable for high-frequency applications.
Frequency130MHz
PackageTO-251-3
PolarityPNP
Power950mW
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Technical Specifications
Onsemi 2SA2169-E technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -290mV |
| Collector Emitter Voltage (VCEO) | -580mV |
| Collector-emitter Voltage-Max | 580mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 950mW |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 950mW |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SA2169-E Datasheet
Download the complete datasheet for Onsemi 2SA2169-E to view detailed technical specifications.
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