PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage, 2A maximum DC collector current, and 800mW power dissipation. This single-element silicon transistor offers a minimum DC current gain of 100 at 100mA and 2V, with a typical transition frequency of 150MHz. Housed in a 3-pin (2+Tab) TP-FA plastic package measuring 6.5mm x 5.5mm x 2.3mm, it operates from -55°C to 150°C.
PackageTP-FA
MountingSurface Mount
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Technical Specifications
Onsemi 2SB1201R-TL-E technical specifications.
General
| Package/Case | TP-FA |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.7(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 800mW |
| Material | Si |
| Minimum DC Current Gain | 100@100mA@2V |
| Maximum Transition Frequency | 150(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Onsemi 2SB1201R-TL-E Datasheet
Download the complete datasheet for Onsemi 2SB1201R-TL-E to view detailed technical specifications.
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