PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 50V and a maximum DC collector current of 2A. Offers 800mW maximum power dissipation and a minimum DC current gain of 140 at 100mA/2V. This single-element silicon transistor is housed in a 3-pin plastic TP package with a tab, measuring 6.5mm x 2.3mm x 5.5mm. Operating temperature range is -55°C to 150°C.
PackageTP
MountingThrough Hole
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Technical Specifications
Onsemi 2SB1201S-E technical specifications.
General
| Package/Case | TP |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.5 |
| Seated Plane Height (mm) | 8.6 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 800mW |
| Material | Si |
| Minimum DC Current Gain | 140@100mA@2V |
| Maximum Transition Frequency | 150(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi 2SB1201S-E Datasheet
Download the complete datasheet for Onsemi 2SB1201S-E to view detailed technical specifications.
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