The 2SB1203S-TL-E is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 5A. It features a gain bandwidth product of 130MHz and a maximum operating temperature of 150°C. The transistor is packaged in a TO-252-3 package, which is lead-free and RoHS compliant. It is suitable for use in high-frequency applications and can withstand a maximum power dissipation of 1W.
Onsemi 2SB1203S-TL-E technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -280mV |
| Collector-emitter Voltage-Max | 550mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 130MHz |
| Height | 5.5mm |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 5A |
| Max Frequency | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Package Quantity | 700 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Width | 2.3mm |
| RoHS | Compliant |
No datasheet is available for this part.
