The 2SB1302T-TD-E is a PNP bipolar junction transistor with a collector-emitter voltage rating of 20V and a maximum collector current of 5A. It operates at frequencies up to 320MHz and can dissipate a maximum power of 1.3W. The transistor is packaged in a TO-243 package and is lead-free. It has an operating temperature range of -55°C to 150°C and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi 2SB1302T-TD-E datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 320MHz |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Collector Current | 5A |
| Max Frequency | 320MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.3W |
| RoHS Compliant | Yes |
| Series | 2SB1302 |
| Width | 2.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2SB1302T-TD-E to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.