NPN bipolar junction transistor designed for through-hole mounting in a TO-220 package. Features a maximum collector-emitter voltage of 160V and a maximum DC collector current of 1.5A. Offers a maximum power dissipation of 30000mW and a typical transition frequency of 100MHz. This single-element silicon transistor operates up to 150°C.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.2 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 8.8 |
| Seated Plane Height (mm) | 20.7 |
| Pin Pitch (mm) | 2.55 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 180V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 160V |
| Maximum DC Collector Current | 1.5A |
| Maximum Power Dissipation | 30000mW |
| Material | Si |
| Maximum Transition Frequency | 100(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
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