NPN Bipolar Junction Transistor (BJT) in a TO-126-3 package, featuring a 160V collector-emitter breakdown voltage and a 1.5A maximum collector current. This single-element transistor offers a low collector-emitter saturation voltage of 450mV and a transition frequency of 120MHz. Designed for high-temperature operation up to 150°C, it boasts a power dissipation of 1.5W and is RoHS compliant and lead-free.
Frequency120MHz
PackageTO-126-3
PolarityNPN
Power1.5W
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Technical Specifications
Onsemi 2SC3902T technical specifications.
General
| Package/Case | TO-126-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 450mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 450mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 120MHz |
| Height | 11mm |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 1.5A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC3902T Datasheet
Download the complete datasheet for Onsemi 2SC3902T to view detailed technical specifications.
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