NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Voltage (VCEO) and a 100mA Max Collector Current. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 180MHz. Packaged in a SOT-416 (SC-75) surface-mount case with 3 pins. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 125mW.
Frequency180MHz
PackageSOT-416
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi 2SC4617 technical specifications.
General
| Package/Case | SOT-416 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 120 |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 125mW |
| RoHS Compliant | No |
| Transition Frequency | 180MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2SC4617 Datasheet
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