The 2SC4617T1 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 125mW and operates over a temperature range of -55°C to 150°C. The device is packaged in a 3-pin SC-75 case and is available in quantities of 3000 units per reel.
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi 2SC4617T1 technical specifications.
General
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 120 |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 180MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi 2SC4617T1 Datasheet
Download the complete datasheet for Onsemi 2SC4617T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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