NPN RF transistor featuring a 7 GHz transition frequency and 12 dB gain. This single-element device operates with a maximum collector current of 70 mA and a collector-emitter breakdown voltage of 10 V. Housed in a compact SC-59 / CP (TO-236-3) package with matte tin plating, it offers a maximum power dissipation of 200 mW and operates across a temperature range of -55°C to 150°C. The component is lead-free, RoHS compliant, and supplied in a 3000-piece tape and reel.
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Onsemi 2SC5227A-4-TB-E technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 7GHz |
| Gain | 12dB |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 70mA |
| Max Frequency | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 7GHz |
| Width | 1.5mm |
| RoHS | Compliant |
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