ONSEMI

2SC5227A-5-TB-E

RF NPN BJT Transistor 7GHz 10V 70mA 200mW SC-59 T/R

Onsemi

2SC5227A-5-TB-E

Name: 2SC5227A-5-TB-E Onsemi
Brand: Onsemi
SKU: 2SC5227A-5-TB-E

RF NPN BJT Transistor 7GHz 10V 70mA 200mW SC-59 T/R

NPN RF Bipolar Junction Transistor designed for high-frequency applications. Features a 10V collector-emitter breakdown voltage and a 70mA maximum collector current. Operates up to 7GHz with a gain bandwidth product of 7GHz. Housed in a 3-pin SC-59 (TO-236-3) package with matte tin plating, this RoHS compliant component offers 200mW power dissipation and a minimum hFE of 50.

Frequency7GHz

PackageTO-236-3

PolarityNPN

Power200mW

Quick Jump:

Technical Specifications

Onsemi 2SC5227A-5-TB-E technical specifications.

General

Package/Case	TO-236-3
Collector Base Voltage (VCBO)	20V
Collector Emitter Breakdown Voltage	10V
Collector Emitter Voltage (VCEO)	10V
Collector-emitter Voltage-Max	10V
Contact Plating	Tin, Matte
Emitter Base Voltage (VEBO)	2V
Frequency	7GHz
Gain	12dB
Gain Bandwidth Product	7GHz
Height	1.1mm
hFE Min	50
Lead Free	Lead Free
Length	2.9mm
Max Breakdown Voltage	10V
Max Collector Current	70mA
Max Frequency	7GHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	200mW
RoHS Compliant	Yes
Transition Frequency	7GHz
Width	1.5mm