The 2SC5347AF-TD-E is a single NPN RF transistor with a gain bandwidth product of 4.7GHz and a minimum current gain of 60. It has a maximum collector current of 150mA and a maximum power dissipation of 1.3W. The transistor is packaged in a TO-243AA package and is lead free and RoHS compliant. It operates over a temperature range of -55°C to 150°C.
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Onsemi 2SC5347AF-TD-E technical specifications.
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Emitter Base Voltage (VEBO) | 2V |
| Gain | 8dB |
| Gain Bandwidth Product | 4.7GHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.3W |
| RoHS Compliant | Yes |
| Transition Frequency | 4.7GHz |
| RoHS | Compliant |
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