The 2SC6097-E is a bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 3A. It has a maximum power dissipation of 800mW and is packaged in a TO-251-3 case. The transistor is RoHS compliant and has a transition frequency of 390MHz. It operates over a temperature range of -55°C to 150°C and is available in a bulk packaging quantity of 500 units.
PackageTO-251-3
PolarityNPN
Power800mW
Quick Jump:
Technical Specifications
Onsemi 2SC6097-E technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 135mV |
| Emitter Base Voltage (VEBO) | 6.5V |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 800mW |
| RoHS Compliant | Yes |
| Series | 2SC6097 |
| Transition Frequency | 390MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC6097-E Datasheet
Download the complete datasheet for Onsemi 2SC6097-E to view detailed technical specifications.
No datasheet is available for this part.