NPN Bipolar Junction Transistor (BJT) in a DPAK package, featuring a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. This single-element transistor offers a low collector-emitter saturation voltage of 100mV and a transition frequency of 390MHz. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 800mW. Packaged on a 700-piece tape and reel, this RoHS compliant component is lead-free.
Frequency390MHz
PackageDPAK
PolarityNPN
Power800mW
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Technical Specifications
Onsemi 2SC6097-TL-E technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 135mV |
| Emitter Base Voltage (VEBO) | 6.5V |
| Gain Bandwidth Product | 390MHz |
| Height | 2.3mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Frequency | 390MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Number of Elements | 1 |
| Package Quantity | 700 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 800mW |
| RoHS Compliant | Yes |
| Transition Frequency | 390MHz |
| Width | 5.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2SC6097-TL-E Datasheet
Download the complete datasheet for Onsemi 2SC6097-TL-E to view detailed technical specifications.
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