The 2SD1835T-AA is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 2A. It has a gain bandwidth product of 150MHz and a collector-emitter saturation voltage of 150mV. The transistor is packaged in a lead-free SIP package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 750mW.
Sign in to ask questions about the Onsemi 2SD1835T-AA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi 2SD1835T-AA technical specifications.
| Package/Case | SIP |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2SD1835T-AA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
