The 2SJ655 is a TO-220-3 packaged power transistor with a maximum drain to source voltage of 100V and continuous drain current of 12A. It features a maximum power dissipation of 2W and an on-resistance of 136mR. The transistor is RoHS compliant and available in bulk packaging with a quantity of 100 units per package. It is suitable for use in a variety of applications requiring high power handling and reliability.
Onsemi 2SJ655 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 2.09nF |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Package Quantity | 100 |
| Packaging | Bulk |
| Power Dissipation | 2W |
| Rds On Max | 136mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
