N-channel enhancement mode MOSFET, ideal for automotive applications. Features a 60V drain-source voltage and 0.32A continuous drain current. Housed in a compact 3-pin SOT-23 (TO-236AB) surface-mount plastic package with gull-wing leads. Offers a low gate threshold voltage of 2.3V and a maximum drain-source on-resistance of 1600 mOhm at 10V. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Onsemi 2V7002KT1G technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.3 |
| Package Height (mm) | 0.94 |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AB |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.32A |
| Maximum Gate Threshold Voltage | 2.3V |
| Maximum Drain Source Resistance | 1600@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 24.5@20VpF |
| Maximum Power Dissipation | 420mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| PPAP | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi 2V7002KT1G Datasheet
Download the complete datasheet for Onsemi 2V7002KT1G to view detailed technical specifications.
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