N-Channel JFET, single element configuration, featuring 30V drain-source breakdown voltage and 150mA continuous drain current. Offers 3.7 Ohm drain-source resistance (Rds On Max) and 150mW power dissipation. Operates across a -55°C to 150°C temperature range, with turn-on delay of 19ns and fall time of 120ns. Packaged in tape and reel, this RoHS and Halogen Free component measures 1.4mm length, 0.8mm width, and 0.6mm height.
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Onsemi 3LN01SS-TL-H technical specifications.
| Continuous Drain Current (ID) | 150mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.7R |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Height | 0.6mm |
| Input Capacitance | 7pF |
| Lead Free | Lead Free |
| Length | 1.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Rds On Max | 3.7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 19ns |
| Width | 0.8mm |
| RoHS | Compliant |
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