Single P-Channel Junction Field-Effect Transistor (JFET) with a -30V Drain to Source Breakdown Voltage and 100mA Continuous Drain Current. Features a low 10.4 Ohm Drain to Source Resistance (Rds On Max) and a compact TO-236-3 package. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 250mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
PackageTO-236-3
PolarityP-CHANNEL
Power250mW
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Technical Specifications
Onsemi 3LP01C-TB-E technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
100mA
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
10.4R
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
130ns
Gate to Source Voltage (Vgs)
10V
Height
1.1mm
Input Capacitance
7.5pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Number of Elements
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
250mW
Rds On Max
10.4R
RoHS Compliant
Yes
Turn-Off Delay Time
120ns
Turn-On Delay Time
24ns
Width
1.5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi 3LP01C-TB-E Datasheet
Download the complete datasheet for Onsemi 3LP01C-TB-E to view detailed technical specifications.
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