
Single P-Channel Junction Field-Effect Transistor (JFET) with a -30V Drain to Source Breakdown Voltage and 100mA Continuous Drain Current. Features a low 10.4 Ohm Drain to Source Resistance (Rds On Max) and a compact TO-236-3 package. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 250mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
Onsemi 3LP01C-TB-E technical specifications.
Download the complete datasheet for Onsemi 3LP01C-TB-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
