Single P-Channel Junction Field-Effect Transistor (JFET) with a -30V Drain to Source Breakdown Voltage and 100mA Continuous Drain Current. Features a low 10.4 Ohm Drain to Source Resistance (Rds On Max) and a compact TO-236-3 package. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 250mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
PackageTO-236-3
PolarityP-CHANNEL
Power250mW
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Technical Specifications
Onsemi 3LP01C-TB-E technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 10.4R |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.1mm |
| Input Capacitance | 7.5pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 250mW |
| Rds On Max | 10.4R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 24ns |
| Width | 1.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 3LP01C-TB-E Datasheet
Download the complete datasheet for Onsemi 3LP01C-TB-E to view detailed technical specifications.
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