Single P-Channel Junction Field-Effect Transistor (JFET) for small signal applications. Features a -30V Drain to Source Breakdown Voltage and 100mA Continuous Drain Current. Offers a low Rds On of 10.4 Ohms and a maximum power dissipation of 150mW. Packaged in a compact SOT-323 surface mount case, this component operates across a wide temperature range from -55°C to 150°C. Halogen and lead-free, it is supplied in tape and reel packaging.
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Onsemi 3LP01M-TL-H technical specifications.
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| Input Capacitance | 7.5pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Rds On Max | 10.4R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 24ns |
| Width | 1.25mm |
| RoHS | Compliant |
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