The 4MP10CH-TL-E is a surface mount PNP bipolar junction transistor with a collector emitter breakdown voltage of 200V and a maximum collector current of 100mA. It has a maximum power dissipation of 600mW and a transition frequency of 400MHz. The device is packaged in a SC package and is available in a cut tape format. It is suitable for use in a variety of applications where a high current gain and high frequency operation are required.
PackageSC
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi 4MP10CH-TL-E technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 200V |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Transition Frequency | 400MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 4MP10CH-TL-E Datasheet
Download the complete datasheet for Onsemi 4MP10CH-TL-E to view detailed technical specifications.
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