The 50A02MH-TL-E is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It has a gain bandwidth product of 690MHz and a maximum power dissipation of 600mW. The transistor is packaged in a small outline R-PDSO-F3 package, measuring 2.1mm in width and 0.85mm in height. It is lead free and RoHS compliant, with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
Onsemi 50A02MH-TL-E technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -60mV |
| Collector-emitter Voltage-Max | 120mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 690MHz |
| Height | 0.85mm |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Frequency | 690MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 690MHz |
| Width | 2.1mm |
| RoHS | Compliant |
No datasheet is available for this part.
