NPN Bipolar Junction Transistor (BJT) with a 50V collector-emitter breakdown voltage and 500mA maximum collector current. Features low 100mV collector-emitter saturation voltage and a gain bandwidth product of 500MHz. Housed in an SC package, this lead-free, RoHS-compliant component operates from -55°C to 150°C with a maximum power dissipation of 700mW. Supplied in a 3000-piece tape and reel.
Frequency1MHz
PackageSC
PolarityNPN
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Technical Specifications
Onsemi 50C02CH-TL-E technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector-emitter Voltage-Max | 100mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 500MHz |
| Height | 0.9mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 500MHz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 50C02CH-TL-E Datasheet
Download the complete datasheet for Onsemi 50C02CH-TL-E to view detailed technical specifications.
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