The 50C02MH-TL-E is a surface-mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 600mW. This lead-free device is RoHS compliant and available in tape and reel packaging.
PackageSMD/SMT
PolarityNPN
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Technical Specifications
Onsemi 50C02MH-TL-E technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 100mV |
| Emitter Base Voltage (VEBO) | 5V |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Series | 50C02MH |
| Transition Frequency | 500MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 50C02MH-TL-E Datasheet
Download the complete datasheet for Onsemi 50C02MH-TL-E to view detailed technical specifications.
No datasheet is available for this part.
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