The 5HN01M-TL-H is an N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 50V and a continuous drain current of 100mA. The device is packaged in a SOT-323-3 surface mount package and is RoHS compliant. It has a maximum power dissipation of 150mW and a gate to source voltage of 20V.
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| Package/Case | SOT-323-3 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 7.5R |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.2pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 7.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 105ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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Notice of discontinuance for various Onsemi products due to the closure of the 5-inch production line and the elimination of Hydrazine at the Niigata (OSNC) facility.
