The 5LN01C-TB-H is a single N-channel junction field-effect transistor with a breakdown voltage of 50V and a continuous drain current of 100mA. It features a low drain to source resistance of 7.8 ohms and a fast switching time with a fall time of 105ns and a turn-off delay time of 190ns. The device is packaged in a TO-236-3 case and is suitable for operation over a temperature range of -55°C to 150°C.
PackageTO-236-3
PolarityN-CHANNEL
Power250mW
Quick Jump:
Technical Specifications
Onsemi 5LN01C-TB-H technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 7.8R |
| Element Configuration | Single |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.6pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Rds On Max | 7.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 5LN01C-TB-H Datasheet
Download the complete datasheet for Onsemi 5LN01C-TB-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
