N-Channel JFET, single element configuration, offering 50V drain-to-source breakdown voltage and 100mA continuous drain current. Features 7.8 Ohm drain-to-source resistance (Rds On Max) and 250mW power dissipation. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-92 SIP with 2500 units per reel, this lead-free and RoHS compliant component is ideal for small signal applications.
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Onsemi 5LN01SP-AC technical specifications.
| Package/Case | SIP |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 7.8R |
| Drain to Source Voltage (Vdss) | 50V |
| Element Configuration | Single |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 3mm |
| Input Capacitance | 6.6pF |
| Lead Free | Lead Free |
| Length | 4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 2500 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Rds On Max | 7.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 18ns |
| Width | 2.2mm |
| RoHS | Compliant |
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