This P-channel junction field-effect transistor features a maximum drain to source breakdown voltage of -60V and a continuous drain current of 370mA. The device has a maximum power dissipation of 600mW and a drain to source resistance of 4.2 ohms. It is packaged in a surface-mount TO-236-3 package and is lead-free and RoHS compliant. The transistor is suitable for use in a variety of applications, including general-purpose switching and amplification.
Onsemi 6HP04CH-TL-W technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 370mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 4.2R |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance | 24.1pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 4.2R |
| RoHS Compliant | Yes |
| Weight | 0.050717oz |
| RoHS | Compliant |
No datasheet is available for this part.
