PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 800mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Designed for through-hole mounting, this RoHS compliant component operates within a temperature range of -55°C to 150°C. Maximum power dissipation is 625mW.
Sign in to ask questions about the Onsemi BC32716 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi BC32716 technical specifications.
| Package/Case | TO-92 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Weight | 0.2g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC32716 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
