
P-Channel Power MOSFET featuring a 30V drain-source breakdown voltage and 25A continuous drain current. Offers a low 30mΩ drain-to-source resistance (Rds On Max). Designed for efficient switching with a turn-on delay of 9.2ns and fall time of 70ns. Operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 30W. Packaged in a DPAK (Single Gauge) / ATPAK, tape and reel format with 3000 units per reel. This component is RoHS compliant and Halogen Free.
Onsemi ATP101-TL-H technical specifications.
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.5mm |
| Input Capacitance | 875pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 30W |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 9.2ns |
| Width | 7.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi ATP101-TL-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
